SiC FET. RFMW announces design and sales support for a discrete 250-Micron pHEMT which operates from DC to 20 GHz. 4: Package Type: MO-229: Country Of Origin: CN: ECCNCode:The UJ4SC075005L8S is a 750V, 5. With 32dB of typical gain, the RFPA5552 offers high. 4 mohm, MO-299. 4 mΩ. DPD corrected ACPR is -50 dBc at +28 dBm output power. 4 mohm, MO-299. RFMW, Ltd. 4GHz downconverter from TriQuint. QSPICE can also help engineers analyze power integrity and noise in power management and mixed-signal designs where these are critical metrics, especially for SiC-based devices that operate at high frequencies. 7GHz with 10 and 18 watts of saturated output power respectively. announces design and sales support for a high efficiency, GaN, 5 watt, input-matched transistor covering the 5GHz ISM bands. Absorptive by design, the QPC6014 can handle up to 4 watts of input power from 50 to 6000MHz and 2 watts from 5 to 50MHz. The Qorvo TGA2625-CP offers >40% PAE and up to 28dB of gain. RFMW announces design and sales support for a Wi-Fi 6 (802. announces design and sales support for TriQuint Semiconductor’s TQP4M0010, SPDT switch featuring up to 50dB of isolation from an internally terminated, absorptive design. 5 GHz frequency range. Skip to Main Content +48 71 749 74 00. $110. 153kW (Tc) Surface Mount TOLL from Qorvo. Qorvo 的 UJ4SC075008L8S 是一款 750 V、8. Italiano; EUR €. UJ4SC075005L8S -- 750 V, 5. Comparing SiC FETs and Si. The TGF2965-SM offers 5 watts of output power from 30 to 3000MHz. PK '弌V SPICE/PK @~fV?&鉐 ? SPICE/UJ4SC075005L8S. The UJ4SC075005L8S is the first product in a family of 750V SiC FETs released in the TOLL package with on-resistance ranging from 5. announces design and sales support for Qorvo’s TQL9092, a flat-gain, high-linearity, ultra-low noise amplifier (LNA). RFMW announces design and sales support for a Wi-Fi 6 (802. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when The UJ4SC075005L8S is a 750V, 5. 4mΩ G4 SiC FET. 3 mm high—half the height of D2PAK surface-mount offerings. The TGA2760-SM isThe goal of PE International Conference 2023 is to provide communication and opportunity along the entire value chain of the power electronics industry Check…RFMW announces design and sales support for a digital controlled variable gain amplifier from Qorvo. 图2：uj4sc075005l8s在175°c的最大结温下的实际峰值电流能力与时间和脉冲宽度 在对大型散热器具有较小界面热阻的其他条件下，受内部接合线的限制，器件的最大连续电流可高达120a。 sic fet与si-mosfet的比较The figure below shows the comparison, both at 25°C and 125°C for a SiC FET from Qorvo, part UJ4SC075005L8S and other current best-in-class TOLL packaged devices, Si MOSFETs, GaN HEMT cells and SiC MOSFETs. 6 14. announces design and sales support for the TQL9047, an 8-pin, 2x2mm DFN packaged gain block from TriQuint Semiconductor. RFMW, Ltd. 153kW (Tc) Surface Mount TOLL from Qorvo. With R DS(on) and package combinations ranging from 5. The QPD2025D is designed using Qorvo’s proven standard 0. Technology: SiC. SiC MOSFET from Qorvo Download Datasheet Request Quote. The race to reduce power losses in semiconductor switches is being led by wide band-gap (WBG) devices and particularly SiC FETs, cascodes of a silicon carbide JFET and co-packaged silicon MOSFET. 5A. announces design and sales support for a 25W GaN power amplifier. The low insertion loss of 0. RFMW, Ltd. Rp IDR $ USD Indonesia. Farnell Suomi offers fast quotes, same day dispatch, fast delivery, wide inventory, datasheets & technical support. The QPA3230 provides up to 22. The QPA9226 provides 34dB of power gain for femtocells, CPEs and data cards. English. Processed using Silicon on Insulator (SOI), the switch is designed for use in CATV, satellite set top, and other high-performance communications systems requiring high isolation. 5 GHz) and 8 Watts in X-band (9 to 11 GHz). Qty. Incoterms:DDP All prices include duty and customs fees on. The Qorvo QPM5811, GaAs MMIC front-end module, is designed for 8. Providing a peak Doherty output power of. UJ4SC075005L8S – N-Channel 750 V 120A (Tc) 1. 5 to 31 GHz with 22 dB small signal gain. 4 mohm Gen 4 SiC FET. The TOLL package is 30% smaller in footprint than the D2PAK with a size of 10mm x 11. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. 2 This report summarizes the JEDEC. 5dB overall attenuation range. Company Product UJ4SC075005L8S UJ4SC075008L8S UJ4SC075010L8S UJ4SC075018L8S . Add to Compare. 17dB of gain is available from this 5V, 100mA amplifier which offers noise figure of 3dBm up to 1600MHz. EVM is -35dB (MCS9) at +17dBm. RM MYR $ USD Malaysia. Annual General Meeting. 5 to 31GHz. 5GHz, the TriQuint. announces design and sales support for a 9 – 10GHz, 35 watt, GaN power amplifier targeted towards weather and marine radar applications. RFMW, Ltd. The TGS4310-SM is specified for operation from 13 to 19GHz and features low insertion loss of <1. The UJ4SC075005L8S is the first product in a family of 750V SiC FETs released in the TOLL package with on-resistance ranging from 5. Contact Mouser +48 71 749 74 00 | Feedback. 5 – 10. txt蚗[徱P ~. Please confirm your currency selection: LEU Incoterms:DDPUJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. Running from a nominal 5V supply, the TQP9326RFMW, Ltd. 5V operation is possible in. Request a Quote Email Supplier Datasheet Suppliers. Change Location English AUD $ AUD $ USD Australia. RFMW announces design and sales support for a low-loss switch from Qorvo. The QPA9901 power amplifier supports small cells operating in the 2. 5dB. Skip to Main Content +48 71 749 74 00. 6dB of gain and 57dBmV output at 1218MHz. announces design and sales support for Qorvo’s QPM1000, an integrated, 2-20GHz limiter/low noise amplifier. RFMW, Ltd. Large signal gain is 21 dBRFMW, Ltd. The award recognizes RFMW’s strong design, execution, and sales efforts during Qorvo’s 2020 fiscal year. announces design and sales support for a 10 watt GaN power amplifier providing broadband coverage from 6 to 18GHz. With a 12dBm input, the power added efficiency is 30%. SiC & GaN Power Component News This file lists news articles about silicon carbide (SiC) and gallium nitride (GaN) power components from the pages RFMW announces design and sales support for a high-performance, mmWave power amplifier from Qorvo. With a usable bandwidth of 39. Operating from 2110 to 2170MHz, TriQuint’s. Qty. announces design and sales support for a 0. Contact Mouser (Singapore) +65 6788-9233 | Feedback. UJ4SC075005L8S SiC FET, How2Power Today, April 2023. Typical PAE at 2GHz is 63%. 0, 2015-09-28 Qorvo’s UJ4SC075005L8S 5. RFMW announces design and sales support for a dual-channel, low noise amplifier from Qorvo. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. Large signal gain is 28dB. Originally designed to protect CATV set top boxes in conjunction with the broadband demands of. Drawing only 95 mA from a single, 5 V supply, the QPA9121’s low power consumption provides solutions in wirelessThe performance of wide band-gap (WBG) semiconductor switches such as silicon carbide cascode FETs (‘SiC FET’ henceforth) [1] (Figure 1) and SiC MOSFETs is closely tied to its package. Qorvo’s QPB7420 and QPB7425 ICs are designed to support Fiber to The Home (FTTH) applications from 47 to 1218MHz. Serving X-band radar and EW applications from 10 to 12 GHz, the Qorvo QPM1021 amplifier offers 100 Watts of saturated output power with large signal gain of 20 dB. 5 millisecond. Incoterms:DDP All prices include duty and customs fees on select shipping methods. The TriQuint TGA2578 offers 27dB small signal gain while maintaining 40% power added efficiency (PAE). The TQP2451 and TQP2453 support 1900MHz and 1800MHz transmitter designs respectively. 5 GHz with integrated LNA+TR SW+PA. 5GHz devices offering 17dB of gain, nearly twice that of competing GaN devices. 7GHz applications in bands 7, 38 and 41. Prematched forRFMW announces design and sales support for a high-linearity three-stage power amplifier in a low-cost surface-mount package. ) with second harmonic suppression of -15dBc. The QPQ4900 is a compact, bulk-acoustic wave (BAW) band pass filter with 4920 MHz center frequency and 160 MHz bandwidth for Sub-Band n79 applications in TDD small cell base stations, base station infrastructure, repeaters and boosters. The Qorvo TQQ6107 BAW technology offers high isolation for LTE Band 7 uplink (2535MHz) and down link (2655MHz) filter requirements in base stations, repeaters, signal boosters and small cells. The Qorvo QPA9121 provides 28 dB of gain with up to ½ Watt of RF power from 2300 to 5000 MHz. Using a single. The QPA9219 has 30. Used as individual drivers or combined as a symmetric Doherty amplifier, each discrete GaN on SiC HEMT, single-stage power. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when Order today, ships today. RFMW, Ltd. 9 GHz in an air-cavity package. announces design and sales support for a broad bandwidth CATV amplifier. This low value is achieved by advanced cell design, silver sintering die-attach and wafer thinning. Operating from DC to 3. EWave. announces design and sales support for Qorvo’s QPA9219, a ¼ watt power amplifier for small cell radios. Add to Compare. RFMW, Ltd. Power added efficiency (PAE) is >32% for this 28VRFMW announces design and sales support for a high power, GaN amplifier from Qorvo. The Qorvo QPC3614 offers 6-bits of attenuation with 0. Add to Cart. UJ4SC075005L8S – N-Channel 750 V 120A (Tc) 1. Operating from 100MHz to 4. UJ4SC075005L8S 5. Incoterms: DDP is available to customers in EU Member States. Register to my Infineon and get access to thousands of documents. It is highly flexible and can be reconfigured via I2C for multiple applications without the need for PCB changes. Skip to the end of the images gallery. With 72% power added efficiency, the TGF2929-HM runs from a 28V supply buss. Integrating a 5 GHz power amplifier (PA), regulator, single-pole two-throw switch (SP2T), bypassable low noise amplifier (LNA),. 11ac applications, the TQP5523 and. The TGA2620-SM draws only 30mA from a 6V bias supply. 1dB. 4 to. With a 48 V bias, power added efficienciesRFMW, Ltd. CSO is rated at -77dBc while CTB isRFMW, Ltd. The QPA3069 provides 100 Watts of saturated output power for S-band radar applications in the 2. The Qorvo QPQ1280 supports base station infrastructure, repeaters and boosters for designs with pass band frequencies from 2555 to 2655MHz. is a specialized. announces design and sales support for an 11-17GHz driver amplifier providing 25dB of small signal gain and 19dBm nominal P1dB. This hermetic packaged power transistor offers 100W of power from DC to 3. announces design and sales support for a low power, highly integrated, IQ modulator with integrated fractional-N synthesizer and voltage controlled oscillator (VCO). The UJ4SC075005L8S from Qorvo is an N-Channel Enhancement Mode SiC MOSFET that is ideal for solid state relays and circuit-breakers, line rectification, and active-bridge rectification circuits in AC/DC front-ends, EV charging, PV inverters, switch mode power supplies (SMPS), power factor correction modules, motor drives, and. RFMW announces design and sales support for an internally matched amplifier from Qorvo. announces design and sales support for Qorvo’s QPC1217Q, a dual-pole double-throw (DPDT) transfer switch designed for general purpose switching applications between 700 to 6000 MHz where RF port transfer (port swapping) control is needed. Driven from a 28V supply drawing 450mA, power added efficiency is >31%. 5dB of attenuation range from 5 to 6000MHz. 5 to 31 GHz with 22 dB small signal gain. There is a large space between the drain and other connections but, with. RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2120, a discrete 1200-Micron GaAs pHEMT FET. 5 dB of gain while drawing only 90 mA fromUJ4SC075005L8S DISTI # 2312-UJ4SC075005L8SDKR-ND. Home » 6-bit Phase Shifter from RFMW spans 2. 7mm. announces design and sales support for the TQP9108 from Qorvo. RFMW, Ltd. This low value is achieved by advanced cell design, silver sintering die-attach and wafer thinning. RFMW announces design and sales support for a high linearity amplifier from Qorvo. 5W of power, this highly linear (-47dBc ACLR @ 27dBm) amplifier serves 2. announces design and sales support for TriQuint Semiconductor dual device amplifier model TQP3M9041. The Qorvo TQQ0302 offers similar bandwidth and power handling for Band. The TOLL package is 30% smaller in footprint than the D2PAK with a size of 10mm x 11. Performance is rated over a large temperature range (-30 to +85 degrees C) and the TriQuint 885033 is housed in an industry leading. announces design and sales support for the Qorvo QPA9426, small cell power amplifier. Change Location English MYR. announces design and sales support for the TGA2618-SM, 16 to 18GHz Low Noise Amplifier from TriQuint (Qorvo). The goal of PE International Conference 2023 is to provide communication and opportunity along the entire value chain of the power electronics industry Check. element14 India offers special pricing, same day dispatch, fast delivery, wide inventory, datasheets & technical support. Temperature compensated SAW filter technology (TC-SAW) allows the Qorvo QPQ1061 filter to deliver superior temperature stabilized performance. RFMW, Ltd. It provides ultra-low Rds(on) and unmatched performance across. RFMW announces design and sales support for a GaN on SiC amplifier from Qorvo. An example device is the UJ4SC075005L8S from the Qorvo SiC FET range. The Qorvo QPL7433, single ended LNA combines flat gain with broad bandwidth of 50 MHz to 3. The QPC7335 equalizer supports CATV amplifier and transmission systems from 45 to 1000 MHz with a 20 dB slope range. RFMW, Ltd. RFMD’s RFSA2013 provides a linear attenuation slope versus control voltage with very little sensitivity to temperature changes. Qorvo; Done. UJ4SC075005L8S everythingpe. 5 to 4. 7mm. RFMW, Ltd. Description. BAW performance is enhanced with Qorvo’s LowDrift technology and the. 4GHz WLAN, Bluetooth and Wi-FI products must coexist with 4G LTE and TD-LTE signals. 5 Watts of linear power at 25 dBc IMD3 with small signal gain of 25 dB. Both TriQuint devices offer power added efficiency of 54% with a small signal gain of 33dB. UJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. 5GHz, output IP3 is an astounding 50dBm making this 2 Watt amplifier ideal in applications such as small cell transceivers as well as 3G/4G wireless infrastructure, boosters and defense. The Qorvo QPA1017D offers 25 Watts of linear power at 25 dBc IMD3. July 2022 United Silicon Carbide, Inc. Farnell ceská republika nabízí rychlé nabídky, expedici ve stejný den, rychlé dodání, široké zásoby, datové listy a technickou podporu. RFMW announces design and sales support for a L2 Band GPS filter. Mouser offers inventory, pricing, & datasheets for 750 V MOSFET. The Qorvo RFMD2080 can generate output frequencies of between 45MHz and 2700MHz, making it suitable for a wide range of applications such as satellite. 5 GHz radar systems, the QPA1027 amplifier from Qorvo provides a small signal gain of 22 dB. Contact Mouser (UK) +44 (0) 1494-427500 | Feedback. The TGA4548-SM operates from 17 to 20GHz and provides 10W of saturated output power. POWER ELECTRONICS INTERNATIONAL 2023. UJ4SC075005L8S – N-Channel 750 V 120A (Tc) 1. 4mΩ G4 SiC FET. Processed using Silicon on Insulator (SOI), this reflective switch is designed for useOrder today, ships today. 33 dB along with excellent linearity (77 dBm IIP3). RFMW, Ltd. 2 dB noise figure. announces design and sales support for two new 45W GaN on SiC transistors from TriQuint. Delivered. The RFVC6405 covers the full 2-4GHz (S-band) in a single device with exceptional performance. Change Location English EUR € EUR $ USD Finland. RFMW, Ltd. 15um. This SPDT switch offers 60dB of isolation at 2GHz and IIP3 of 66dBm. announces design and sales support for a 17W Psat amplifier supporting Radar applications in the 10-11GHz frequency range. Optimizing the internal PA for 5V operation while maintaining linear output power. RFMW, Ltd. 3V optimized Front End Module from Qorvo. The TGA2313-FL provides 13dB of gain from a 24V supply drawing 2. Change Location English MYR. 4 mohm SiC FET UJ4SC075005L8S. 5dB of gain at. 5dB of gain with 31. An example device is the UJ4SC075005L8S from the Qorvo SiC FET range. announces design and sales support for two S-band power amplifiers from TriQuint. announces design and sales support for two “Small Cell” power amplifiers from TriQuint. 3 GHz. With 75% power added efficiency, the QPD1881L runs from a 50 V consuming 700 mA. Pricing and Availability on millions of electronic components from Digi-Key Electronics. 8 gen 4 uj4sc075006k4s 8. 4 mohm, MO-299. The QPD2018D is designed using Qorvo’s proven standard 0. The QPL1000 covers 8 to 11 GHz with 27 dB small signal gain and 1. Fabricated on TriQuint’s 0. Ideal for use in Radar systems, electronic warfare and communication systems, insertion loss of the TGL2223 ranges. RFMW, Ltd. RFMW, Ltd. 1 – 31GHz digital attenuator from Qorvo. 4 gen 4 uj4sc075011k4s uj4sc075011b7s 18 29 gen 4 uj4sc075018b7s 29 gen 4 uj4sc075018l8s 31 gen 4 uj4c075018k3s* uj4c075018k4s* 23 39 gen 4 uj4c075023k3s* uj4c075023k4s*. 5dB of gain with 31. 4 mOhm UJ4SC075005L8S is 120A up to case temperatures of 144oC, while the pulsed current rating is 588A up to 0. Power gain for the Qorvo TGA2814-CP is rated at 23dB with a 27dBm RFMW, Ltd. Contact Mouser +852 3756-4700 | Feedback. announces design and sales support for a 194MHz, sub-band B41 BAW filter. RFMW, Ltd. RFMW announces design and sales support for a WiFi 6 (802. UJ4SC075005L8S UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL katalogový list, zásoby a ceny. The QPC7522 is a 75 ohm, SPDT switch operating from 5 to 3300 MHz. Qorvo says QSPICE can reduce simulation run times and achieve a 100% completion rate. 5dBm with 18dBm input. Skip to Main Content +39 02 57506571. 25um power pHEMT. RFMW announces design and sales support for a high power amplifier with excellent efficiency and gain. announces design and sales support for Qorvo’s TGF2965-SM, 50 ohm, input-matched transistor. The UJ4SC075005L8S is a 750V, 5. Contact Mouser +48 71 749 74 00 Overview. RFMW announces design and sales support for a GaN on SiC power amplifier. Gain equalizers allow the ability to adjust for power roll off with changes such as temperature, cable length, etc. 3-2. 11ax front end module (FEM). RFMW is honored to be recognized by Qorvo with their 2020 “Global Distributor of the Year – Resilience” award. It provides ultra-low Rds(on) and unmatched performance across. 205 Beach Dr, Victoria, BC V8S 2L9 is currently not for sale. Buy UJ4SC075005L8S - Unitedsic - Silicon Carbide MOSFET, Single, N Channel, 120 A, 750 V, 5. 7 to 3. RFMW, Ltd. announces design and sales support for the TQP9107 from Qorvo, the new company name for the merger of TriQuint and RFMD. Transistor Polarity: N-Channel. 7dB with isolation >20dB. RFMW, Ltd. announces design and sales support for the QPQ1290, a highly selective, low drift, BAW filter for full Band 41 TDD-LTE Tx/Rx. 65 x 1. Skip to Main Content +65 6788-9233. 7mm. RFMW announces design and sales support for a broadband gain block with differential output. 1 to 3. UJ4SC075005L8S – N-Channel 750 V 120A (Tc) 1. RFMW, Ltd. Capable of operation from DC to 2700MHz, the TQQ7399 has aRFMW, Ltd. An example device is the UJ4SC075005L8S from the Qorvo SiC FET range. announces design and sales support for high-performance, X-band front end modules. The Qorvo QPQ1285 supports TDD macro cell and small cell designs with pass band frequencies from 2496 to 2690MHz. 4 mohm, MO-299. The Qorvo TQQ7301 uses BAW technology providing high isolation and low loss for small cells, LTE data cards, repeaters and base station infrastructure applications. announces design and sales support for a 2. The Qorvo QPA9424, with on-chip bias control and temperature control circuits, is suitable for small cell base station applications over the 2300 – 2400 MHz frequency range (band 30 and band 40). TGS2354. The TGA2752-SM provides 28dB of gain and contains an integrated power detector. The Qorvo QPA2308D offers 60 Watts of saturated output power from 5 to 6 GHz for C-Band radar systems and satellite communications. $110. RFMW, Ltd. 6 GHz, 15 Watt / 30 Watt, 48 Volt Asymmetric Doherty QPD0009 Specs. announces design and sales support for a highly integrated T/R FEM designed for high power ISM applications. Victoria British Columbia. Qorvo’s CATV power doubler model QPA3223 reduces system DC current requirements as it draws only 410 mA from a 24 volt supply. Pricing and Availability on millions of electronic components from Digi-Key Electronics. Capable of operating in both pulsed and CW modes, the TGA2625-CP draws 365mA from a 28V bias. Small signal gain ranges as high as 28 dB. RFMW, Ltd. 5 dB for DOCSIS 3. 5GHz. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. announces design and sales support for a GaN power amplifier delivering 80W Psat power from 3. RFMW, Ltd. 4 mohm, MO-299. announces design and sales support for a series of high isolation switches from Qorvo. The Qorvo RFSW6024 supports WIFi, LTE, 4G and general purpose wireless infrastructure from 5 to 6000MHz. 5W amplifier module for small cell applications. Communicate. The TGA2450-SM provides 3 gain stages offering overall gain of 35dB. The 710MHz uplink filter has 45dB attenuation in the downlink band while the 740MHz downlink filter offers 50dB attenuation in the uplink band. 7 to 2. Click here to download RFS discretes. Limited by b Figure 2: Actual peak current capability of part UJ4SC075005L8S for a maximum junction temperature of 175°C v. RFMW, Ltd. Qorvo’s QPQ1907 coexistence bandpass filter has extremely steep attenuation skirts allowing simultaneous low insertion loss in the Wi-Fi band and high, near-in rejection in the 2. No external matching is necessary and the QPQ1285 offers 40dBm attenuation at 2402MHz. Matched to 50 ohms with 20 dBm P1dB and 17. RFMW announces design and sales support for a high efficiency amplifier from Qorvo. 3dBm output. Newark offers fast quotes, same day shipping, fast delivery,. Qorvo’s model QPB8957 provides over 28 dB of flat gain and low noise of 4. RFMW, Ltd. Integrated DC blocks on the RF output reduce circuit design. Report this post Report Report. Offering the highest output power on the market for 802. 60. 3dB for use in both commercial and military radar as well as satellite communication systems. announces design and sales support for Qorvo’s 857182 duplexer for Band 17 LTE. 153kW (Tc) Surface Mount TOLL from Qorvo. Overview. Presenting in a ‘virtual’ ceremony, Rodney Hsing, Sr. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating. Offering 60 Watts of saturated power for 2. UJ4SC075005L8S -- 750 V, 5. 5dBm mid-band saturated output power with. Change Location English NZD $ NZD $ USD New Zealand. Available in a RoHSRFMW, Ltd. 1 to 3. 4 mohm SiC FET. Internally matched to 50 ohms on both input and output ports, this amplifier is easily integrated into designs for wireless. announces design and sales support for two highly selective, LowDrift BAW filters created for Band 3 uplink and downlink applications. The Qorvo QPA3358 provides 34 dB of flat gain and low noise of 4 dB for DOCSIS 3. 4 mohm 750V Gen 4 SiC FET provides ultra-low Rds(on) and unmatched performance across the main figures of merit (FOM)… Liked by Ian Mizel Join now to see all. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.